212 citations · 1.9k across the 51 of their papers we have counts for
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Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
V. Ryzhii, M. Ryzhii, A. Satou +3
We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due t…
Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection
V. Ryzhii, M. Ryzhii, V. Mitin +2
We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is…
S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons
V. Ryzhii, M. Ryzhii, V. Mitin +2
We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n-i-n-n graphene field-effect transistors (G-FET) might lea…
Modulation characteristics of uncooled graphene photodetectors
V. Ryzhii, M. Ryzhii, T. Otsuji +3
We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimens…
Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene~bilayers
V. Ryzhii, M. Ryzhii, T. Otsuji +2
We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their…
Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride
V Ryzhii, T Otsuji, M Ryzhii +5
We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexa…
Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures
V. Ryzhii, T. Otsuji, M. Ryzhii +4
We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the blac…
Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures
V. Ryzhii, M. Ryzhii, D. S. Ponomarev +4
We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-ca…
Effect of doping on the characteristics of infrared photodetectors based on van der Waals~heterostructures with multiple graphene layers
V. Ryzhii, M. Ryzhii, V. Leiman +3
We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The ope…
Ultra-compact injection terahertz laser using the resonant inter-layer radiative transitions in multi-graphene-layer structure
Alexander A. Dubinov, Andrey Bylinkin, Vladimir Ya. Aleshkin +3
The optimization of laser resonators represents a crucial issue for the design of terahertz semiconductor lasers with high gain and low absorption loss. In this paper, we put forwa…
Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions
V Ryzhii, M Ryzhii, M S Shur +3
We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform gra…
Plasmons in tunnel-coupled graphene layers: backward waves with quantum cascade gain
Dmitry Svintsov, Zhanna Devizorova, Taiichi Otsuji +1
Plasmons in van der Waals heterostructures comprised of graphene and related layered materials demonstrate deep subwavelength confinement and large propagation length. In this lett…
A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities
Akira Satou, Gen Tamamushi, Kenta Sugawara +3
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating…
Giant Plasmon Instability in Dual-Grating-Gate Graphene Field-Effect Transistor
Y. Koseki, V. Ryzhii, T. Otsuji +2
We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equati…
Emission and amplification of surface plasmons in resonant - tunneling van der Waals heterostructures
D. Svintsov, Zh. Devizorova, T. Otsuji +1
We predict a new mechanism of surface plasmon amplification in graphene-insulator-graphene van der Waals heterostructures. The amplification occurs upon the stimulated interlayer e…
Negative terahertz conductivity in remotely doped graphene bilayer heterostructures
V. Ryzhii, M. Ryzhii, V. Mitin +2
Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. T…
Negative terahertz conductivity in disordered graphene bilayers with population inversion
D. Svintsov, T. Otsuji, V. Mitin +2
The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising me…
Graphene vertical cascade interband terahertz and infrared photodetectors
V. Ryzhii, T. Otsuji, M. Ryzhii +5
We propose and evaluate the vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungste…
Negative dynamic Drude conductivity in pumped graphene
D. Svintsov, V. Ryzhii, T. Otsuji
We theoretically reveal a new mechanism of light amplification in graphene under the conditions of interband population inversion. It is enabled by the indirect interband transitio…
Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation
D. Svintsov, V. G. Leiman, V. Ryzhii +2
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. T…
Carrier-carrier scattering and negative dynamic conductivity in pumped graphene
Dmitry Svintsov, Victor Ryzhii, Akira Satou +2
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to th…
Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures
M. Ryzhii, V. Ryzhii, T. Otsuji +4
We evaluate the effect of the recombination associated with interlayer transitions in ungated and gated double-graphene-layer (GL) structures on the injection of electrons and hole…
Injection terahertz laser using the resonant inter-layer radiative transitions in double-graphene-layer structure
V. Ryzhii, A. A. Dubinov, V. Ya. Aleshkin +2
We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We es…
Double injection in graphene p-i-n structures
V. Ryzhii, I. Semenikhin, M. Ryzhii +4
We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias vo…