Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation
arXiv:1406.2127 · doi:10.1088/0022-3727/47/50/505105
Abstract
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging of top GL, resulting in the drain current oscillations. To estimate the device responsivity, we solve the hydrodynamic equations for the electrons and holes in graphene governing the plasma-wave response, and the equation describing the graphene membrane oscillations. The combined plasma-mechanical resonance raises the current amplitude by up to four orders of magnitude. The use of graphene as a material for the elastic gate and conductive channel allows the voltage tuning of both resonant frequencies in a wide range.
arXiv comment13 pages, 5 figures
References in corpus (14)
- Ultrahigh electron mobility in suspended graphene
- A tunable carbon nanotube electromechanical oscillator
- Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
- Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene
- Graphene mechanical oscillators with tunable frequency
- Continuum elastic modeling of graphene resonators
- Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
- Voltage and temperature dependencies of conductivity in gated graphene
- Hydrodynamic model for electron-hole plasma in graphene
- UV/Ozone treatment to reduce metal-graphene contact resistance
- SU-8 clamped CVD graphene drum resonators
- Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities
- Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator
- Tuning mechanical modes and influence of charge screening in nanowire resonators