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20012022
most citedAntiferromagnetic spintronics

2.5k citations · 6.8k across the 49 of their papers we have counts for

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23 papers · 1 filter

cond-mat.mes-hall2022★ 4 cited

Symmetry effects on the static and dynamic properties of coupled magnetic oscillators

J P. Patchett, M. Drouhin, J. W. Liao +7

The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossin…

cond-mat.mes-hall2019★ 183 cited

Imaging and writing magnetic domains in the non-collinear antiferromagnet MnSn

Helena Reichlova, Tomas Janda, Joao Godinho +12

Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the…

cond-mat.mes-hall2016★ 23 cited

Nano scale thermo-electrical detection of magnetic domain wall propagation

Patryk Krzysteczko, James Wells, Alexander Fernandez Scarioni +12

In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables import…

cond-mat.mes-hall2016★ 30 cited

Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses

T. Janda, P. E. Roy, R. M. Otxoa +9

Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high…

cond-mat.mes-hall2016★ 4 cited

Efficient conversion of light to charge and spin in Hall-bar microdevice

L. Nádvorník, J. A. Haigh, K. Olejník +4

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. I…

cond-mat.mes-hall2016★ 70 cited

Robust Picosecond writing of a Layered Antiferromagnet by Staggered Spin-Orbit-Fields

P. E. Roy, R. M. Otxoa, J. Wunderlich

Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biax…

cond-mat.mes-hall2015★ 16 cited

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

L. Nádvorník, P. Němec, T. Janda +8

The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercializ…

cond-mat.mes-hall2015

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

M. F. Gonzalez-Zalba, C. Ciccarelli, L. P. Zarbo +6

We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium…

cond-mat.mes-hall2014★ 38 cited

Optical spin transfer torque driven domain wall motion in ferromagnetic semiconductor

A. J. Ramsay, P. E. Roy, J. A. Haigh +6

We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. Firstly, photocarrier spin…

cond-mat.mes-hall2013★ 5 cited

Observation of a Berry phase anti-damping spin-orbit torque

H. Kurebayashi, Jairo Sinova, D. Fang +10

Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one…

cond-mat.mes-hall2013★ 10 cited

Spin and Orbital Splitting in Ferromagnetic Contacted Single Wall Carbon Nanotube Devices

K. Y. Wang, A. M. Blackburn, H. F. Wang +2

We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing…

cond-mat.mes-hall2012★ 14 cited

Spin gating electrical current

C. Ciccarelli, L. P. Zarbo, A. C. Irvine +5

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to…

cond-mat.mes-hall2010★ 265 cited

Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique

D. Fang, H. Kurebayashi, J. Wunderlich +7

We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures pat…

cond-mat.mes-hall2008★ 71 cited

Spin-injection Hall effect in a planar photovoltaic cell

J. Wunderlich, A. C. Irvine, Jairo Sinova +5

Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical de…

cond-mat.mes-hall2008★ 7 cited

Magneto-optical and micromagnetic simulation study the current driven domain wall motion in ferromagnetic (Ga,Mn)As

K. Y. Wang, A. C. Irvine, R. P. Campion +4

We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical K…

cond-mat.mes-hall2008

Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning

K Y Wang, A C Irvine, J Wunderlich +6

We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic an…

cond-mat.mes-hall2007

The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices

A. W. Rushforth, K. Výborný, C. S. King +11

We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield dir…

cond-mat.mes-hall2007

Magnetocrystalline anisotropy controlled local magnetic configurations in (Ga,Mn)As spin-transfer-torque microdevices

J. Wunderlich, A. C. Irvine, J. Zemen +11

The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields b…

cond-mat.mes-hall2007★ 125 cited

Anisotropic Magnetoresistance components in (Ga,Mn)As

A. W. Rushforth, K. Výborný, C. S. King +11

Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic phy…

cond-mat.mes-hall2006★ 3 cited

Low-dimensional light-emitting transistor with tunable recombination zone

B. Kaestner, J. Wunderlich, T. J. B. M. Janssen

We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithograp…

cond-mat.mes-hall2005★ 6 cited

Co-planar spin-polarized light emitting diode

B. Kaestner, J. Wunderlich, Jairo Sinova +1

Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced elec…

cond-mat.mes-hall2004★ 1.5k cited

Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system

Joerg Wunderlich, Bernd Kaestner, Jairo Sinova +1

We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction…

cond-mat.mes-hall2004★ 92 cited

Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

A. D. Giddings, M. N. Khalid, J. Wunderlich +10

We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this…