Low-dimensional light-emitting transistor with tunable recombination zone
arXiv:cond-mat/0608389 · doi:10.1080/09500340600759605
Abstract
We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombination zone tunable in size and position. It could therefore provide an architecture for probing low-dimensional devices by analysing the emitted light of the recombination zone.
12 Pages, to be published in Journal of Modern Optics
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