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20012022
most citedAntiferromagnetic spintronics

2.5k citations · 6.8k across the 49 of their papers we have counts for

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21 papers · 1 filter

cond-mat.mtrl-sci2022★ 13 cited

Anomalous Nernst effect in MnNiN thin films

Sebastian Beckert, João Godinho, Freya Johnson +13

The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antifer…

cond-mat.mtrl-sci2022

Ultrashort spin-orbit torque generated by femtosecond laser pulses

T. Janda, T. Ostatnicky, P. Nemec +6

To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch m…

cond-mat.mtrl-sci2021★ 5 cited

Inertial domain wall characterization in layered multisublattice antiferromagnets

R. Rama-Eiroa, P. E. Roy, J. M. González +3

The motion of a Néel-like domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet MnAu is explored. Through…

cond-mat.mtrl-sci2018★ 158 cited

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

J. Godinho, H. Reichlova, D. Kriegner +11

Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferroma…

cond-mat.mtrl-sci2017★ 157 cited

Current-polarity dependent manipulation of antiferromagnetic domains

P. Wadley, S. Reimers, M. J. Grzybowski +11

Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external mag…

cond-mat.mtrl-sci2017★ 1 cited

Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

T. Jungwirth, J. Sinova, A. Manchon +3

This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review ar…

cond-mat.mtrl-sci2015★ 2.5k cited

Antiferromagnetic spintronics

T. Jungwirth, X. Marti, P. Wadley +1

Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magn…

cond-mat.mtrl-sci2015★ 92 cited

Electrical detection of magnetization reversal without auxiliary magnets

K. Olejník, V. Novák, J. Wunderlich +1

First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memo…

cond-mat.mtrl-sci2014

Spin Hall effect

Jairo Sinova, Sergio O. Valenzuela, J. Wunderlich +2

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first o…

cond-mat.mtrl-sci2014★ 520 cited

Relativistic Neel-order fields induced by electrical current in antiferromagnets

J. Zelezny, H. Gao, K. Vyborny +6

We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which…

cond-mat.mtrl-sci2013★ 175 cited

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

T. Jungwirth, J. Wunderlich, V. Novak +7

Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries…

cond-mat.mtrl-sci2011★ 78 cited

Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks

X. Marti, B. G. Park, J. Wunderlich +8

We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled…

cond-mat.mtrl-sci2010★ 1 cited

Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve

B. G. Park, J. Wunderlich, X. Marti +9

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard…

cond-mat.mtrl-sci2010

Antiferromagnetic I-Mn-V semiconductors

T. Jungwirth, V. Novak, X. Marti +14

After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. R…

cond-mat.mtrl-sci2010★ 259 cited

Spin-orbit coupling induced anisotropy effects in bimetallic antiferromagnets: A route towards antiferromagnetic spintronics

Alexander B. Shick, Sergii Khmelevskyi, Oleg N. Mryasov +2

Magnetic anisotropy phenomena in bimetallic antiferromagnets MnAu and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-pa…

cond-mat.mtrl-sci2008★ 23 cited

Low voltage control of ferromagnetism in a semiconductor p-n junction

M. H. S. Owen, J. Wunderlich, V. Novak +8

The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current infor…

cond-mat.mtrl-sci2008★ 147 cited

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

V. Novak, K. Olejnik, J. Wunderlich +8

We observe a singularity in the temperature derivative of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with 's ranging from ap…

cond-mat.mtrl-sci2008★ 65 cited

Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As

E. De Ranieri, A. W. Rushforth, K. Vyborny +8

It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter…

cond-mat.mtrl-sci2008★ 98 cited

Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures

A. W. Rushforth, E. De Ranieri, J. Zemen +10

We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large…

cond-mat.mtrl-sci2007★ 28 cited

Domain imaging and domain wall propagation in (Ga,Mn)As thin films with tensile strain

K. Y. Wang, A. W. Rushforth, V. A. Grant +7

We have performed spatially resolved Polar Magneto-Optical Kerr Effect Microscopy measurements on as-grown and annealed Ga0.95Mn0.05As thin films with tensile strain. We find that…

cond-mat.mtrl-sci2007★ 42 cited

Absence of skew scattering in two-dimensional systems: Testing the origins of the anomalous Hall effect

Mario F. Borunda, Tamara S. Nunner, Thomas Luck +6

We study the anomalous Hall conductivity in spin-polarized, asymmetrically confined two-dimensional electron and hole systems, focusing on skew-scattering contributions to the tran…