42 citations · 140 across the 15 of their papers we have counts for
11 papers · 1 filter
An extended low-frequency noise compact model for single-layer graphene FETs including correlated mobility fluctuations effect
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, David Jimenez
Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect…
A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Tzu-Jung Huang +3
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This…
Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
N. Mavredakis, A. Pacheco-Sanchez, R. Garcia Cortadella +3
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time…
Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…
Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri +7
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for a…
Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…
Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei +3
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-s…
Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics
Ferney A. Chaves, Anibal Pacheco-Sanchez, David Jimenez
The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical e…
Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels
Anibal Pacheco-Sanchez, Quim Torrent, David Jiménez
The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated a…
An extraction method for mobility degradation and contact resistance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +1
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different techn…
The gate tunable 2D pn junction driven out-of-equilibrium
Ferney A. Chaves, David Jiménez
We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently s…