1 citations · 2 across the 3 of their papers we have counts for
4 papers
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…
Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Yixiong Zheng, Zixuan Feng, A F M Anhar Uddin Bhuiyan +5
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b…
Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography
Jith Sarker, A F M Anhar Uddin Bhuiyan, Zixuan Feng +2
In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe…
Probing charge transport and background doping in MOCVD grown (010) -GaO
Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8
A new record-high room temperature electron Hall mobility ( at ) for -Ga2O3 is demonstrated in the unin…