A. Bhuiyan

activity

20202025

most citedLarge-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off

21 citations · 43 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2025★ 20 cited

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities

Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta +1

We systematically investigated the growth of Si-doped $β$ -Ga $_{2}$ O $_{3}$ films using LPCVD system, achieving high electron mobilities of 162 cm $^{2}$ /V.s and 149 cm $^{2}$ /V.s at carrier c…

cond-mat.mtrl-sci2023

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm…

cond-mat.mtrl-sci2023

Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices

Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…

cond-mat.mtrl-sci2023

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +5

Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the pr…

cond-mat.mtrl-sci2022★ 1 cited

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…

cond-mat.mtrl-sci2022

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +2

The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al $_{2}$ O $_{3}$ dielectrics on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ films is investigated as a funct…

cond-mat.mtrl-sci2022

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang +3

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates vi…

cond-mat.mtrl-sci2021

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7

In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$ -Ga2O3. Etching of $β$ …

cond-mat.mtrl-sci2021★ 21 cited

Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off

Yixiong Zheng, Zixuan Feng, A F M Anhar Uddin Bhuiyan +5

In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b…

physics.app-ph2020★ 1 cited

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography

Jith Sarker, A F M Anhar Uddin Bhuiyan, Zixuan Feng +2

In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe…

physics.app-ph2020

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8

A new record-high room temperature electron Hall mobility ( $μ_{R T} = 194 c m^{2} / V s$ at $n \sim 8 \times 1 0^{15} c m^{- 3}$ ) for $β$ -Ga2O3 is demonstrated in the unin…

LPCVD Grown Si-Doped β-Ga2​O3​ Films with Promising Electron Mobilities

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

In-situ MOCVD Growth and Band Offsets of Al2​O3​ Dielectric on β-Ga2​O3​ and β-(Alx​Ga1−x​)2​O3​ thin films

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Planar and 3-dimensional damage free etching of β-Ga2O3 using atomic gallium flux

Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off

Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography

Probing charge transport and background doping in MOCVD grown (010) β-Ga2​O3​

LPCVD Grown Si-Doped $β$ -Ga $_{2}$ O $_{3}$ Films with Promising Electron Mobilities

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$