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physics.app-ph2020★ 1 cited
Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography
Jith Sarker, A F M Anhar Uddin Bhuiyan, Zixuan Feng +2
In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe…
physics.app-ph2020
Probing charge transport and background doping in MOCVD grown (010) -GaO
Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8
A new record-high room temperature electron Hall mobility ( at ) for -Ga2O3 is demonstrated in the unin…