1 citations · 2 across the 4 of their papers we have counts for
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LPCVD Grown Si-Doped -GaO Films with Promising Electron Mobilities
Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta +1
We systematically investigated the growth of Si-doped -GaO films using LPCVD system, achieving high electron mobilities of 162 cm/V.s and 149 cm/V.s at carrier c…
Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm…
Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…
Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Yixiong Zheng, Zixuan Feng, A F M Anhar Uddin Bhuiyan +5
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b…