LPCVD Grown Si-Doped $\beta$-Ga${}_2$O${}_3$ Films with Promising Electron Mobilities

Saleh Ahmed Khan, Ahmed Ibreljic, Stephen Margiotta +1

We systematically investigated the growth of Si-doped $\beta$-Ga${}_2$O${}_3$ films using LPCVD system, achieving high electron mobilities of 162 cm${}^2$/V.s and 149 cm${}^2$/V.s at carrier c…