A. Bhuiyan

activity

20202025

most citedLarge-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off

21 citations · 43 across the 11 of their papers we have counts for

collaborators

Showing 2022Show all

3 papers · 1 filter

cond-mat.mtrl-sci2022★ 1 cited

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…

cond-mat.mtrl-sci2022

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +2

The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al $_{2}$ O $_{3}$ dielectrics on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ films is investigated as a funct…

cond-mat.mtrl-sci2022

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang +3

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates vi…

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

In-situ MOCVD Growth and Band Offsets of Al2​O3​ Dielectric on β-Ga2​O3​ and β-(Alx​Ga1−x​)2​O3​ thin films

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films