activity
19972024
most citedTowards the fabrication of phosphorus qubits for a silicon quantum computer

200 citations · 1k across the 19 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

12 papers · 1 filter

cond-mat.mes-hall2024

Focused deposition of levitated nanoscale Au droplets

Joyce E. Coppock, B. E. Kane

We describe a method for depositing nanoscale liquid Au droplets, initially levitated in an ion trap in high vacuum, onto a remote substrate. A levitated Au nanosphere is melted, e…

cond-mat.mes-hall2022

Observation of undercooling in a levitated nanoscale liquid Au droplet

Joyce Coppock, Quinn Waxter, Robert Wolle +1

We investigate melting and undercooling in nanoscale (radius ~100 nm) gold particles that are levitated in a quadrupole ion (Paul) trap in a high vacuum environment. The particle i…

cond-mat.mes-hall2016★ 27 cited

Optical and magnetic measurements of gyroscopically stabilized graphene nanoplatelets levitated in an ion trap

Pavel Nagornykh, Joyce E. Coppock, Jacob P. J. Murphy +1

Using optical measurements, we demonstrate that the rotation of micron-scale graphene nanoplatelets levitated in a quadrupole ion trap in high vacuum can be frequency locked to an…

cond-mat.mes-hall2015★ 40 cited

Cooling of Levitated Graphene Nanoplatelets in High Vacuum

Pavel Nagornykh, Joyce E. Coppock, B. E. Kane

We demonstrate cooling of the center of mass motion of charged graphene nanoplatelets levitated in a quadrupole ion trap in high vacuum down to temperatures of 20 K. Parametric fee…

cond-mat.mes-hall2015★ 7 cited

Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor

Binhui Hu, M. M. Yazdanpanah, B. E. Kane +2

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same…

cond-mat.mes-hall2009★ 14 cited

Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface

Robert N. McFarland, Tomasz M. Kott, Luyan Sun +2

Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degen…

cond-mat.mes-hall2006★ 15 cited

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

K. R. Brown, L. Sun, B. E. Kane

We present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily do…

cond-mat.mes-hall2005★ 32 cited

High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

K. Eng, R. N. McFarland, B. E. Kane

We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron sy…

cond-mat.mes-hall2004★ 19 cited

Weak Localization Thickness Measurements of Si:P Delta-Layers

D. F. Sullivan, B. E. Kane, P. E. Thompson

We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data shows that the effective thickness of a delta-layer…

cond-mat.mes-hall2003★ 15 cited

A Millikelvin Scanned Probe for Measurement of Nanostructures

K. R. Brown, L. Sun, B. E. Kane

We demonstrate a scanning force microscope, based upon a quartz tuning fork, that operates below 100 mK and in magnetic fields up to 6 T. The microscope has a conducting tip for el…

cond-mat.mes-hall1998

Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET

G. R. Facer, B. E. Kane, A. S. Dzurak +5

We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without mo…

cond-mat.mes-hall1997★ 1 cited

Anomalous Carrier Lifetime Enhancement and Effective Mass Discontinuity Observed during Magnetic-field-induced Subband Depopulation in a Parabolic Quantum Well

G. R. Facer, B. E. Kane, R. G. Clark +1

In GaAs/AlGaAs parabolic quantum wells, subbands are depopulated by a magnetic field in the well plane. A small additional perpendicular field induces Shubnikov-de-Haas (SdH) oscil…