Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs
arXiv:cond-mat/9808251 · doi:10.1103/PhysRevB.58.R13338
Abstract
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.
arXiv comment3 pages, 3 figures
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