Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers

Abstract

In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory shows excellent agreement with experiment.

4pages, 4Postscript figures, RevTeX4

References in corpus (3)

• Large magnetoresistance using hybrid spin filter devices
• Spin filtering through ferromagnetic BiMnO3 tunnel barriers
• Spin-filter magnetoresistance in magnetic barrier junctions

Cited by in corpus (15)

• Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers
• Exchange interactions in europium monochalcogenide magnetic semiconductors and their dependence on hydrostatic strain
• Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides
• Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier
• A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds
• High bias anomaly in YBa2Cu3O7/LaMnO_{3+delta}/YBa2Cu3O7 Superconductor/Ferromagnetic Insulator/Superconductor junctions: Evidence for a long-range superconducting proximity effect through the conduction band of a ferromagnetic insulator
• Tunnel Magnetoresistance of a Single-Molecule Junction
• The role of magnetic anisotropy in spin filter junctions
• Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions
• Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6
• Impact of tunnel barrier strength on magnetoresistance in carbon nanotubes
• Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO${}_3$
• Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt
• Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions
• Gate-voltage response of a one-dimensional ballistic spin valve without spin-orbit interaction