Nanometer-Scale Materials Contrast Imaging with a Near-Field Microwave Microscope

Abstract

We report topography-free materials contrast imaging on a nano-fabricated Boron-doped Silicon sample measured with a Near-field Scanning Microwave Microscope over a broad frequency range. The Boron doping was performed using the Focus Ion Beam technique on a Silicon wafer with nominal resistivity of 61 Ohm.cm. A topography-free doped region varies in sheet resistance from 1000Ohm/Square to about 400kOhm/Square within a lateral distance of 4 micrometer. The qualitative spatial-resolution in sheet resistance imaging contrast is no worse than 100 nm as estimated from the frequency shift signal.

5 pages, 3 figures, 1 table

References in corpus (5)

• Quantitative Imaging of Sheet Resistance with a Scanning Near-Field Microwave Microscope
• Surface Resistance Imaging with a Scanning Near-Field Microwave Microscope
• Effect of tip-geometry on contrast and spatial-resolution of the Near-Field Microwave Microscope
• A near-field scanned microwave probe for spatially localized electrical metrology
• Near-Field Microwave Microscopy on nanometer length scales

Cited by in corpus (7)

• Modeling of a Cantilever-Based Near-Field Scanning Microwave Microscope
• Cryogenic Microwave Imaging of Metal-Insulator Transition in Doped Silicon
• A near-field scanning microwave microscope based on a superconducting resonator for low power measurements
• Local Measurement of Microwave Response with Local Tunneling Spectra Using Near Field Microwave Microscopy
• Microwave Microscope Studies of Trapped Vortex Dynamics in Superconductors
• Low-temperature-compatible tunneling-current-assisted scanning microwave microscope utilizing a rigid coaxial resonator
• Near-field microwave imaging of inhomogeneous K${}_x$Fe${}_y$Se${}_2$: separation of topographic and electric features