Zero differential resistance state of two dimensional electron systems in strong magnetic fields
arXiv:cond-mat/0703100 · doi:10.1103/PhysRevLett.99.116801
Abstract
Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance, which occurs above threshold value of the direct current. The state depends significantly on the temperature and is not observable above several Kelvins. Additional analysis shows lack of the linear stability of the 2D electron systems at and inhomogeneous, non-stationary pattern of the electric current in the zero differential resistance state. We suggest that the dc bias induced redistribution of the 2D electrons in energy space is the dominant mechanism leading to the new electron state.
5 pages, 3 figures
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- Microwave Photoresistance in dc-driven 2D Systems at Cyclotron Resonance Subharmonics
- Nonlinear resistance of 2D electrons in crossed electric and magnetic fields
- Theory of the microwave-induced photocurrent and photovoltage magnetooscillations in a spatially non-uniform 2D electron gas
- Low temperature electron-phonon resonance in dc-current-biased two-dimensional electron systems
- Nonlinear theory of fractional microwave-induced magnetoresistance oscillations in a dc-driven two-dimensional electron system
- Nonlinear magnetoresistance of an irradiated two-dimensional electron system
- Effect of parallel magnetic field on the Zero Differential Resistance State
- Hall field induced magnetoresistance oscillations of a two-dimensional electron system