Magnetoplasmon resonance in 2D electron system driven into a zero-resistance state
arXiv:1203.4781 · doi:10.1103/PhysRevB.85.121306
Abstract
We report on a remarkably strong, and a rather sharp, photoresistance peak originating from a dimensional magnetoplasmon resonance (MPR) in a high mobility GaAs/AlGaAs quantum well driven by microwave radiation into a zero-resistance state (ZRS). The analysis of the MPR signalreveals a negative background providing experimental evidence for the concept of absolute negative resistance associated with the ZRS. When a system is further subject to a dc field, the maxima of microwave-induced resistance oscillations decay away and a system reveals a state with close-to-zero differential resistance. The MPR peak, on the other hand, remains essentially unchanged, indicating surprisingly robust Ohmic behavior under the MPR conditions.
4 pages, 2 figures; to appear in Phys. Rev. B - Rapid Communications
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Cited by in corpus (7)
- Nonequilibrium phenomena in high Landau levels
- Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells
- Evidence for effective mass reduction in GaAs/AlGaAs quantum wells
- Microwave-induced magnetooscillations and signatures of zero-resistance states in phonon-drag voltage in two-dimensional electron systems
- Microwave Photoresistance in an Ultrahigh Quality GaAs Quantum Well
- Emergence of domains and nonlinear transport in the zero-resistance state
- Resistively detected high-order magnetoplasmons in a high-quality 2D electron gas