Weak localization in ferromagnetic (Ga,Mn)As nanostructures

Abstract

We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length is typically between 100 nm and 200 nm at 20 mK. Strong spin-orbit interaction in the material is manifested by a weak anti-localization correction around zero magnetic field.

5 pages, 3 figures

References in corpus (2)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Dephasing in (Ga,Mn)As nanowires and rings

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