Broadband dielectric microwave microscopy on $\mu$m length scales

Abstract

We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially-resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a Focused Ion Beam (FIB) milled structure on a high-dielectric-constant Ba_{0.6}Sr_{0.4}TiO_3 (BSTO) thin film in the frequency range from 1.3 GHz to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above ~10 GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images.

19 pages (preprint format), 5 figures; to be published in Review of Scientific Instruments

References in corpus (5)

• Surface Resistance Imaging with a Scanning Near-Field Microwave Microscope
• Imaging of Microwave Permittivity, Tunability, and Damage Recovery in (Ba,Sr)TiO3 Thin Films
• Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope
• Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe
• Near-Field Microwave Microscopy on nanometer length scales

Cited by in corpus (4)

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• Broadband Microwave Spectroscopy for Two-Dimensional Material Systems
• Microwave Microscope Studies of Trapped Vortex Dynamics in Superconductors
• Shielded cantilever with on-chip interferometer circuit for THz scanning probe impedance microscopy