Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

Abstract

We present a method for noncontact, noninvasive measurements of dielectric constant, k, of 100-nm- to 1.5-μm-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 micron sampling spot size, and provides <0.3% precision and <2% accuracy for k-value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few-micron tip size.

8 pages, 3 figures

References in corpus (2)

• Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope
• A near-field scanned microwave probe for spatially localized electrical metrology

Cited by in corpus (3)

• Broadband dielectric microwave microscopy on $\mu$m length scales
• Near-field scanning microwave microscope for interline capacitance characterization of nanoelectronics interconnect
• Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers