Imaging of Microwave Permittivity, Tunability, and Damage Recovery in (Ba,Sr)TiO3 Thin Films

Abstract

We describe the use of a near-field scanning microwave microscope to quantitatively image the dielectric permittivity and tunability of thin-film dielectric samples on a length scale of 1 micron. We demonstrate this technique with permittivity images and local hysteresis loops of a 370 nm thick barium strontium titanate thin film at 7.2 GHz. We also observe the role of annealing in the recovery of dielectric tunability in a damaged region of the thin film. We can measure changes in relative permittivity as small as 2 at 500, and changes in dielectric tunability as small as 0.03 V${}^{-1}$.

5 pages, 2 figures. To be published in Applied Physics Letters, Nov. 15, 1999

References in corpus (3)

• Quantitative Imaging of Sheet Resistance with a Scanning Near-Field Microwave Microscope
• Surface Resistance Imaging with a Scanning Near-Field Microwave Microscope
• Superconducting Material Diagnostics using a Scanning Near-Field Microwave Microscope

Cited by in corpus (8)

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• Local Measurement of Microwave Response with Local Tunneling Spectra Using Near Field Microwave Microscopy
• Development of a Nanostructual Microwave Probe Based on GaAs
• A Nanostructual Microwave Probe Used for Atomic Force Microscope