Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4

Abstract

Electrons at interfaces, driven to minimize their free energy, are distributed differently than in bulk. This can be dramatic at interfaces involving heterovalent compounds. Here we profile an abrupt interface between V 3d2 LaVO3 and V 3d0 LaVO4 using electron energy loss spectroscopy. Although no bulk phase of LaVOx with a V 3d1 configuration exists, we find a nanometer-wide region of V 3d1 at the LaVO3/LaVO4 interface, rather than a mixture of V 3d0 and V 3d2. The two-dimensional sheet of 3d1 electrons is a prototypical electronic reconstruction at an interface between competing ground states.

14 pages, 5 figures

References in corpus (3)

• Why Some Interfaces Cannot be Sharp
• Spin Order due to Orbital Fluctuations: Cubic Vanadates
• Anisotropy of Mott-Hubbard gap transitions due to spin and orbital ordering in LaVO3 and YVO3

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• The Mott insulator LaTiO_3 in heterostructures with SrTiO_3 is metallic
• Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
• Effect of charge modulation in (LaVO3)m(SrVO3)n superlattices on the insulator-metal transition
• Embedding approach for dynamical mean field theory of strongly correlated heterostructures
• Electron-Hole Liquids in Transition Metal Oxide Heterostructures
• Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions
• Microstructure and interface studies of LaVO3/SrVO3 superlattices
• Mapping electronic reconstruction at the metal/insulator interfaces in \ce{LaVO_3/SrVO_3} heterostructures
• The impact of the near-surface region on the interpretation of x-ray absorption spectroscopy
• Kondo effect goes anisotropic in vanadate oxide superlattices