Epitaxial Growth of VO${}_2$ by Periodic Annealing

Abstract

We report the growth of ultrathin VO${}_2$ films on rutile TiO${}_2$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO${}_2$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

25 pages, 6 figures

References in corpus (2)

• Epitaxial Growth of VO${}_2$ by Periodic Annealing
• Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4

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