Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

Abstract

We used x-ray photoemission spectroscopy to investigate the electronic structure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upper layer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2p core-level spectra had both V3+ and V4+ components, and above 2 unit cell thick LaVO3, the structures exhibited spectra similar to bulk samples. The atomically flat surfaces enabled study of the emission angle dependence, which indicates the V4+ is localized to the topmost layer. These results demonstrate the potential for probing interface electronic structure in oxide ultrathin films by surface spectroscopy.

arXiv comment11 pages, 4 figures

References in corpus (3)

• Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance
• Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions
• Understanding the bulk electronic structure of Ca1-xSrxVO3

Cited by in corpus (10)

• Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
• Two-Dimensional Confinement of 3d1 Electrons in LaTiO3/LaAlO3 Multilayers
• Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers
• Electron-Hole Liquids in Transition Metal Oxide Heterostructures
• Electronic structure of the SrTiO${}_3$/LaAlO${}_3$ interface revealed by resonant soft x-ray scattering
• Photoemission study of TiO2/VO2 interfaces
• Structural analysis of strained LaVO${}_3$ thin films
• Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy
• Electrical domain writing and nanoscale potential modulation on LaVO${}_3$/SrTiO${}_3$
• Enhanced charge-transfer character in the monoclinic phase of Mott-insulator LaVO3 thin film