Electron transport in armchair single-wall carbon nanotubes
arXiv:cond-mat/0604121 · doi:10.1016/j.physe.2006.03.158
Abstract
The rates of electron scattering via phonons in the armchair single-wall carbon nanotubes were calculated by using the improved scattering theory within the tight-binding approximation. Therefore, the problem connected with the discrepancy of the scattering rates calculated in the framework of the classical scattering theory and ones predicted by experimental data was clarified. Then these results were used for the solving of the kinetic Boltzmann equation to describe electron transport properties of the nanotubes. The equation was solved numerically by using both the finite difference approach and the Monte Carlo simulation procedure.
10 pages, 4 figures, accepted for publication in Physica E: Low-Dim. Syst. Nanostr
References in corpus (11)
- High-Field Electrical Transport in Single-Wall Carbon Nanotubes
- Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes
- High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
- Ballistic Transport in Metallic Nanotubes With Reliable Pd Ohmic Contacts
- The phonon dispersion of graphite revisited
- Electron Transport and Hot Phonons in Carbon Nanotubes
- Lateral scaling in carbon nanotube field-effect transistors
- Electrostatic Engineering of Nanotube Transistors for Improved Performance
- Possibility of a Metallic Field-Effect Transistor
- Electron-phonon coupling and Peierls transition in metallic nanotubes
- Electron scattering in multi-wall carbon-nanotubes