11 citations · 11 across the 4 of their papers we have counts for
4 papers
Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration
Andrei Borzdov, Dmitry Pozdnyakov, Vladimir Borzdov
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering…
Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas
Andrei Borzdov, Dmitry Pozdnyakov, Vadim Galenchik +2
Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadenin…
Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels
Dmitry Pozdnyakov, Vadim Galenchik, Vladimir Borzdov +2
An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level…
Electron transport in armchair single-wall carbon nanotubes
Dmitry Pozdnyakov, Vadim Galenchik, Fadei Komarov +1
The rates of electron scattering via phonons in the armchair single-wall carbon nanotubes were calculated by using the improved scattering theory within the tight-binding approxima…