Electron scattering in multi-wall carbon-nanotubes
arXiv:cond-mat/0206264 · doi:10.1103/PhysRevB.66.085409
Abstract
We analyze two scattering mechanisms that might cause intrinsic electronic resistivity in multi-wall carbon nanotubes: scattering by dopant impurities, and scattering by inter-tube electron-electron interaction. We find that for typically doped multi-wall tubes backward scattering at dopants is by far the dominating effect.
6 pages, 2 figures, to appear in Phys. Rev. B