Hooge's Constant of Carbon Nanotube Field Effect Transistors

Abstract

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air.

References in corpus (6)

• High-Field Electrical Transport in Single-Wall Carbon Nanotubes
• DNA-decorated carbon nanotubes for chemical sensing
• Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors
• Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes
• Very low shot noise in carbon nanotubes
• Low frequency conductance fluctuations (1/f^αnoise) in 15nm Ag nanowires: Implication on its stability

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• Scaling of 1/f noise in tunable break-junctions
• Low-frequency Noise in Individual Carbon Nanotube Field-Effect Transistors with Top, Side and Back Gate Configurations: Effect of Gamma Irradiation
• An alternative form of Hooge's relation for 1/f noise in semiconductor materials
• Ultra-Low Noise Multiwalled Carbon Nanotube Transistors
• Linear current fluctuations in the power-law region of metallic carbon nanotubes
• The influence of a single defect in composite gate insulators on the performance of nanotube transistors