A Tunable Anomalous Hall Effect in a Non-Ferromagnetic System

Abstract

We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew-scattering of carriers by disorder near the crossover to localization.

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• Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
• Spin-injection Hall effect in a planar photovoltaic cell
• Absence of skew scattering in two-dimensional systems: Testing the origins of the anomalous Hall effect
• Anomalous Hall effect in a two dimensional electron gas with magnetic impurities
• Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet
• Landauer-Büttiker Study of the Anomalous Hall Effect
• Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure
• Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems
• 2D skew scattering in the vicinity and away from resonant scattering condition
• Spin-dependent electron-impurity scattering in two-dimensional electron systems