Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption

Abstract

We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths and in a wide temperature range with the result that the saturation intensity substantially decreases with narrowing of the QWs. Spin relaxation times are derived from the measured saturation intensities by making use of calculated (linear) absorption coefficients for direct inter-subband transitions. It is shown that spin relaxation is due to the D'yakonov-Perel' mechanism governed by hole-hole scattering. The problem of selection rules is addressed.

14 pages, 5 figures

References in corpus (5)

• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Rashba spin splitting in two-dimensional electron and hole systems
• Anomalous Rashba spin splitting in two-dimensional hole systems
• Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW
• Spin sensitive bleaching and monopolar spin orientation in quantum wells

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