In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor
arXiv:cond-mat/0303212 · doi:10.1063/1.1583142
Abstract
A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism.
12 pages, 3 figures
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Cited by in corpus (12)
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