Upper limit of spin relaxation in suspended graphene

Abstract

We use a combination of molecular dynamics and quantum transport simulations to investigate the upper limit of spin transport in suspended graphene. We find that thermally-induced atomic-scale corrugations are the dominant factor, limiting spin lifetimes to ~10 ns by inducing a strongly-varying local spin-orbit coupling. These extremely short-range corrugations appear even when the height profile appears to be smooth, suggesting they may be present in any graphene device. We discuss our results in the context of experiments, and briefly consider approaches to suppress these short-range corrugations and further enhance spin lifetimes in graphene-based spin devices.

9 pages, 5 figures

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
• Boron nitride substrates for high-quality graphene electronics
• The structure of suspended graphene sheets
• Atomic Structure of Graphene on SiO2
• The Kernel Polynomial Method
• Van der Waals heterostructures for spintronics and opto-spintronics
• Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom
• Manipulation of Spin Transport in Graphene by Surface Chemical Doping
• Spin communication over 30 $\mu$m long channels of chemical vapor deposited graphene on SiO${}_2$
• Ultralong 100 ns Spin Relaxation Time in Graphite at Room Temperature