Check-probe spectroscopy of lifetime-limited emitters in bulk-grown silicon carbide

Abstract

Solid-state single-photon emitters provide a versatile platform for exploring quantum technologies such as optically connected quantum networks. A key challenge is to ensure optical coherence and spectral stability of the emitters. Here, we introduce a high-bandwidth `check-probe' scheme to quantitatively measure (laser-induced) spectral diffusion and ionisation rates, as well as homogeneous linewidths. We demonstrate these methods on single V2 centers in commercially available bulk-grown 4H-silicon carbide. Despite observing significant spectral diffusion under laser illumination ($\gtrsim$ GHz/s), the optical transitions are narrow ($\sim$35 MHz), and remain stable in the dark ($\gtrsim$1 s). Through Landau-Zener-Stückelberg interferometry, we determine the optical coherence to be near-lifetime limited ($T_2=16.4(4)$ ns), hinting at the potential for using bulk-grown materials for developing quantum technologies. These results advance our understanding of spectral diffusion of quantum emitters in semiconductor materials, and may have applications for studying charge dynamics across other platforms.

References in corpus (20)

• Realization of a multi-node quantum network of remote solid-state qubits
• Qubit teleportation between non-neighboring nodes in a quantum network
• Entanglement of Nanophotonic Quantum Memory Nodes in a Telecom Network
• Fault-tolerant operation of a logical qubit in a diamond quantum processor
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Ultrafast spectral diffusion measurement on nitrogen vacancy centers in nanodiamonds using correlation interferometry
• Control and coherence of the optical transition of single defect centers in diamond
• Optically coherent nitrogen-vacancy centers in μm-thin etched diamond membranes
• Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
• Experimental demonstration of entanglement delivery using a quantum network stack
• Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
• Entangling remote qubits using the single-photon protocol: an in-depth theoretical and experimental study
• Experimental Generation of Spin-Photon Entanglement in Silicon Carbide
• Thresholds for the distributed surface code in the presence of memory decoherence
• Spectral stability of V2 centres in sub-micron 4H-SiC membranes
• Heralded initialization of charge state and optical transition frequency of diamond tin-vacancy centers
• Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Limits for coherent optical control of quantum emitters in layered materials

Cited by in corpus (4)

• Laser-induced spectral diffusion and excited-state mixing of silicon T centres
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• A Concise Primer on Solid-State Quantum Emitters
• Laser-cut Patterned, Micrometer-thin Diamond Membranes with Coherent Color Centers for Open Microcavities