Performance analysis of photodetectors based on 2D materials and heterostructures

Abstract

The unprecedented demand for sophisticated, self-powered, compact, ultrafast, cost-effective, and broadband light sensors for a myriad of applications has spurred a lot of research, precipitating in a slew of studies over the last decade. Apart from the photosensing ability of an active element in the light sensor, the device architecture is crucial in terms of photoinduced charge carrier generation and separation. Since the inception of graphene and the subsequent research growth in the atomically thin 2D materials, researchers have developed and adapted different families of 2D materials and device architectures, including single element 2D, 0D/2D, 2D/2D, 1D/ 2D stacked structures, and so on. This review discusses the recent reports on the light-sensing properties of various 2D materials, their heterostructures, and characteristics applicable to the ultraviolet-near infrared (UV-NIR), short-wave IR (SWIR), mid-wave IR (MWIR), long-wave IR (LWIR), and terahertz (THz) spectral ranges. It highlights the novelty of the burgeoning field, the heightened activity at the boundaries of engineering and materials science, particularly in the generation of charge carriers, their separation, and extraction, and the increased understanding of the underpinning science through modern experimental approaches. Devices based on the simultaneous effects of the pyro-phototronic effect (PPE) and the localized surface plasmon resonance (LSPR) effect, the photothermoelectric effect (PTE)-assisted photodetectors (PDs), waveguide-integrated silicon-2D PDs, metal-2D-metal PDs, and organic material PDs are examined rigorously. Theoretical treatment utilizing various computational approaches to investigate 2D materials and heterostructures for photodetection applications is also briefly discussed.

88 pages

References in corpus (23)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• A Perfect Metamaterial Absorber
• Boron nitride substrates for high-quality graphene electronics
• Two-Dimensional Material Nanophotonics
• Graphene photodetectors for high-speed optical communications
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Mixed-Dimensional van der Waals Heterostructures
• High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
• Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
• Photocurrent generation with two-dimensional van der Waals semiconductors
• Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
• Mechanisms of photoconductivity in atomically thin MoS2
• Rayleigh Imaging of Graphene and Graphene Layers
• Liquid Crystal Tunable Metamaterial Perfect Absorber
• Photoconductivity of biased graphene
• Atomically thin group-V elemental films: theoretical investigations of antimonene allotropes
• Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
• High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition
• Approaching magnetic ordering in graphene materials by FeCl${}_3$ intercalation
• Gate-tunable emission of exciton-plasmon polaritons in hybrid MoS2-gap-mode metasurfaces
• Van der Waals Heterostructures Based on Allotropes of Phosphorene and MoSe2
• Substrate Sensitive Mid-Infrared Photoresponse in Graphene