Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Abstract

High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, policrystaline stoichiometric Gd2O3 films were obtained by HPS. MIS with the dielctric deposited at higher pressures also present lower flatband voltage shifts in the C-V hysteris curves.

7 pages, 10 figures

References in corpus (1)

• Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

Cited by in corpus (3)

• High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
• Scavenging effect on plasma oxidized Gd${}_2$O${}_3$ grown by high pressure sputtering on Si and InP substrates
• Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics