12 citations · 56 across the 7 of their papers we have counts for
7 papers
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés
In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon…
Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés +2
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from…
Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics
Pedro Carlos Feijoo, María Ángela Pampillón, Enrique San Andrés +1
Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary com…
Scavenging effect on plasma oxidized GdO grown by high pressure sputtering on Si and InP substrates
María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés +3
In this work, we analyze the scavenging effect of titanium gates on metal insulator semiconductor capacitors composed of gadolinium oxide as dielectric material deposited on Si and…
High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
María Ángela Pampillón, Enrique San Andrés, Pedro Carlos Feijoo +1
This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permit…
High Pressure Sputtering For Kigh-k Dielectric Deposition. Is It Worth Trying?
Enrique San Andrés, Pedro Carlos Feijoo, María Ángela Pampillón +2
Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure sputtering. The dielectrics studied here are gadolinium scandate…
Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering
Pedro Carlos Feijoo, María Ángela Pampillón, Enrique San Andrés
High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different dep…