High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

Abstract

This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated.

36 pages, 13 figures

References in corpus (5)

• Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering
• Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
• Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
• Scavenging effect on plasma oxidized Gd${}_2$O${}_3$ grown by high pressure sputtering on Si and InP substrates
• Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics

Cited by in corpus (1)

• Thermal conductivity of rare-earth scandates in comparison to other oxidic substrate crystals