Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics

Abstract

Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF-VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6e11 eV-1 cm-2.

25 pages, 9 figures, 2 tables

References in corpus (2)

• Optimization of scandium oxide growth by high pressure sputtering on silicon
• Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Cited by in corpus (2)

• High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation
• Scavenging effect on plasma oxidized Gd${}_2$O${}_3$ grown by high pressure sputtering on Si and InP substrates