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María Ángela Pampillón Arce

1 paper here

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1
ORCID 0000-0002-6876-1661

identity via Semantic Scholar / OpenAlex

most citedOptimization of gadolinium oxide growth deposited on Si by high pressure sputtering

12 citations · 12 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2024★ 10 cited

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés

In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon…

physics.app-ph2024★ 2 cited

High Pressure Sputtering For Kigh-k Dielectric Deposition. Is It Worth Trying?

Enrique San Andrés, Pedro Carlos Feijoo, María Ángela Pampillón +2

Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure sputtering. The dielectrics studied here are gadolinium scandate…

cond-mat.mtrl-sci2024★ 12 cited

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Pedro Carlos Feijoo, María Ángela Pampillón, Enrique San Andrés

High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different dep…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.