Disorder-induced phase transitions in double HgTe quantum wells
arXiv:2308.13440 · doi:10.1103/PhysRevB.111.045431
Abstract
By using the self-consistent Born approximation, we investigate topological phase transitions in double HgTe quantum wells (QWs) induced by the short-range impurities. Following the evolution of the density-of-states and the spectral function, we demonstrate multiple closings and openings of the band-gap with the increase of the disorder strength due to the mutual inversions between the first and second electron-like and hole-like subbands. We show that starting from a band insulator in the clean limit, under the influence of disorder, the double HgTe QW undergoes a transition, first into a semimetal state similar to "bilayer graphene", and then into a high-order topological insulator state with a double band inversion. We find out that all disorder-induced transitions can be fully characterized by introducing a non-Hermitian quasiparticle Hamiltonian encoding the band structure renormalization and quasiparticle decay.
14 pages, 5 figures
References in corpus (16)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Insulators with Inversion Symmetry
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- Topological Anderson Insulator
- Photonic Topological Anderson Insulators
- Single valley Dirac fermions in zero-gap HgTe quantum wells
- Topological Anderson Insulator in Three Dimensions
- Pressure and temperature driven phase transitions in HgTe quantum wells
- Temperature-driven transition from a semiconductor to a topological insulator
- Disorder Induced Phase Transitions of Type-II Weyl Semimetal
- Robustness of topological order against disorder
- Two-dimensional topological insulator state in double HgTe quantum well
- Topological phase transition in disordered elastic quantum spin Hall system
- Multiple crossing of Landau levels of two-dimensional fermions in double HgTe quantum wells
- Disorder-induced topological phase transition in HgCdTe crystals