Robust Nuclear Spin Polarization via Ground-State Level Anti-Crossing of Boron Vacancy Defects in Hexagonal Boron Nitride

Abstract

Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy (${\mathrm{V}}_{\mathrm{B}}^{-}$) defects in hexagonal boron nitride (h-BN) using ground-state level anti-crossing (GSLAC). We show that GSLAC-assisted nuclear polarization can be achieved with significantly lower laser power than excited-state level anti-crossing, making the process experimentally more viable. Furthermore, we have demonstrated direct optical readout of nuclear spins for ${\mathrm{V}}_{\mathrm{B}}^{-}$ in h-BN. Our findings suggest that GSLAC is a promising technique for the precise control and manipulation of nuclear spins in ${\mathrm{V}}_{\mathrm{B}}^{-}$ defects in h-BN.

7 pages, 4 figures for main text, 13 pages, 17 figures for Supplementary Material. Accepted in Physical Review Letters

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Cited by in corpus (7)

• Single nuclear spin detection and control in a van der Waals material
• Quantum Optics Applications of Hexagonal Boron Nitride Defects
• Nanotube spin defects for omnidirectional magnetic field sensing
• Magnetic-field dependent VB- spin decoherence in hexagonal boron nitrides: A first-principles study
• Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials
• First-principles computational methods for quantum defects in two-dimensional materials: A perspective
• Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride