Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

Abstract

Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. This model allows us, on the one hand, to optimise the conditions for high and homogeneous In incorporation and, on the other hand, to explain the influence of changes in the growth conditions on the sample morphology and In content. Specifically, the impact of the V/III and In/Ga flux ratios, the rotation speed and the rotation direction are investigated. Notably, with In acting as surfactant, the ternary (In,Ga)N shells are much more homogeneous in thickness along the NW length than their binary GaN counterparts.

References in corpus (6)

• Current path in light emitting diodes based on nanowire ensembles
• Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
• Two-Loop Relations for Heavy-Quark Parameters in the Shape-Function Scheme
• Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
• Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy
• Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble

Cited by in corpus (1)

• Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy