6 citations · 12 across the 3 of their papers we have counts for
3 papers
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
David van Treeck, Jonas Lähnemann, Guanhui Gao +3
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on G…
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range
David van Treeck, Jonas Lähnemann, Oliver Brandt +1
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nano…
X-ray scattering study of GaN nanowires grown on Ti/AlO by molecular beam epitaxy
Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese +5
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on AlO are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scatteri…