Plasmonic-enhanced bright single spin defects in silicon carbide membranes
arXiv:2305.03244 · doi:10.1021/acs.nanolett.3c00568
Abstract
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin defect-based quantum applications in mature SiC materials.
References in corpus (11)
- Coherent control of single spins in silicon carbide at room temperature
- Isolated electron spins in silicon carbide with millisecond-coherence times
- Distributed Quantum Computation Based-on Small Quantum Registers
- Engineering near infrared single photon emitters in ultrapure silicon carbide
- Three megahertz photon collection rate from an NV center with millisecond spin coherence
- Coherent spin control of a nanocavity-enhanced qubit in diamond
- Nano-engineered Diamond Waveguide as a Robust Bright Platform for Nanomagnetometry Using Shallow Nitrogen Vacancy Centers
- High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing
- Optical charge state control of spin defects in 4H-SiC
- Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
- Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam