Dynamics of van der Waals Charge Qubit in 2D Bilayers: Ab initio Quantum Transport and Qubit Measurement
arXiv:2210.07350 · doi:10.1103/PhysRevResearch.4.043073
Abstract
A van der Waals (vdW) charge qubit, electrostatically confined within two-dimensional (2D) vdW materials, is proposed as building block of future quantum computers. Its characteristics are systematically evaluated with respect to its two-level anti-crossing energy difference (). Bilayer graphene ( 0) and a vdW heterostructure ( 0) are used as representative examples. Their tunable electronic properties with an external electric field define the state of the charge qubit. By combining density functional theory and quantum transport calculations, we highlight the optimal qubit operation conditions based on charge stability and energy-level diagrams. Moreover, a single-electron transistor (SET) design based on trilayer vdW heterostructures capacitively coupled to the charge qubit is introduced as measurement setup with low decoherence and improved measurement properties. It is found that a greater than 20 meV results in a rapid mixing of the qubit states, which leads to a lower measurement quantity, i.e. contrast and conductance. With properly optimized designs, qubit architectures relying on 2D vdW structures could be integrated into an all-electronic quantum computing platform.
References in corpus (9)
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Non-Abelian Anyons and Topological Quantum Computation
- Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Dependence of band structures on stacking and field in layered graphene
- Microwave-driven coherent operations of a semiconductor quantum dot charge qubit
- Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?
- Multilayer graphene under vertical electric field