activity
20202022
most citedImpact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-effect Transistors

9 citations · 19 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall20227 cited

Dynamics of van der Waals Charge Qubit in 2D Bilayers: Ab initio Quantum Transport and Qubit Measurement

Jiang Cao, Guido Gandus, Tarun Agarwal +2

A van der Waals (vdW) charge qubit, electrostatically confined within two-dimensional (2D) vdW materials, is proposed as building block of future quantum computers. Its characteris…

physics.comp-ph20219 cited

Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-effect Transistors

Cedric Klinkert, Sara Fiore, Jonathan Backmann +2

Two-dimensional materials with strong bandstructure anisotropy such as black phosphorus BP have been identified as attractive candidates for logic application due to their potentia…

cond-mat.mtrl-sci2021

Circuit-aware Device Modeling of Energy-efficient Monolayer WS Trench-FinFETs

Tarun Agarwal, Youseung Lee, Mathieu Luisier

The continuous scaling of semiconductor technology has pushed the footprint of logic devices below 50 nm. Currently, logic standard cells with one single fin are being investigated…

cond-mat.mtrl-sci20203 cited

Efficient partitioning of surface Green's function: toward ab initio contact resistance study

Guido Gandus, Youseung Lee, Daniele Passerone +1

In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiat…

cond-mat.mes-hall2020

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Demetrio Logoteta, Jiang Cao, Marco Pala +3

The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations…

cond-mat.mes-hall2020

Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics

Youseung Lee, Sara Fiore, Mathieu Luisier

We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 u…