The Zeeman and hyperfine interactions of a single ${}^{167}E{r}^{3+}$ ion in Si

Abstract

Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a single 167Er3+ ion in Si. All the obtained tensors are highly anisotropic with the largest value principal axes aligning in nearly the same direction, and the trace of the lowest crystal field level g-tensor is 17.78$\pm$0.40. The results indicate that this specific Er site is likely to be a distorted cubic site that exhibits monoclinic (C1) symmetry. Finally, zero first-order-Zeeman (ZEFOZ) fields are identified for this site and could be used to reduce decoherence of hyperfine spin states in future experiments.

References in corpus (3)

• Narrow optical transitions in erbium-implanted silicon waveguides
• Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
• Hyperfine interactions of ${\text{Er}}^{3+}$ ions in ${\text{Y}}_2{\text{SiO}}_5$: electron paramagnetic resonance in a tunable microwave cavity

Cited by in corpus (7)

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• Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon
• Error channels in quantum nondemolition measurements on spin systems
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator