M-center in low-energy electron irradiated 4H-SiC

Abstract

We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects, and M-center, a metastable defect also recently assigned to carbon interstitial defects. We propose that EH1 and EH3 are identical to M1 and M3 and assign them to C_i^(= ) (h) and C_i^(0 ) (h), respectively. Moreover, we provide direct evidence that Laplace-DLTS can be used as an excellent tool to distinguish otherwise identical DLTS signals associated with S1 (VSi) and EH1 (Ci).

letter

References in corpus (4)

• Coherent control of single spins in silicon carbide at room temperature
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Acceptor levels of the carbon vacancy in $4H$-SiC: combining Laplace deep level transient spectroscopy with density functional modeling
• The M-center in 4H-SiC is a carbon self-interstitial

Cited by in corpus (1)

• Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS