Squeeze-film effect on atomically thin resonators in the high-pressure limit
arXiv:2106.09368 · doi:10.1021/acs.nanolett.1c02237
Abstract
The resonance frequency of membranes depends on the gas pressure due to the squeeze-film effect, induced by the compression of a thin gas film that is trapped underneath the resonator by the high frequency motion. This effect is particularly large in low-mass graphene membranes, which makes them promising candidates for pressure sensing applications. Here, we study the squeeze-film effect in single layer graphene resonators and find that their resonance frequency is lower than expected from models assuming ideal compression. To understand this deviation, we perform Boltzmann and continuum finite-element simulations, and propose an improved model that includes the effects of gas leakage and can account for the observed pressure dependence of the resonance frequency. Thus, this work provides further understanding of the squeeze-film effect and provides further directions into optimizing the design of squeeze-film pressure sensors from 2D materials.
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