Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr

Abstract

Magnetic semiconductors are a powerful platform for understanding, utilizing and tuning the interplay between magnetic order and electronic transport. Compared to bulk crystals, two-dimensional magnetic semiconductors have greater tunability, as illustrated by the gate modulation of magnetism in exfoliated CrI${}_3$ and Cr${}_2$Ge${}_2$Te${}_6$, but their electrically insulating properties limit their utility in devices. Here we report the simultaneous electrostatic and magnetic control of electronic transport in atomically-thin CrSBr, an A-type antiferromagnetic semiconductor. Through magnetotransport measurements, we find that spin-flip scattering from the interlayer antiferromagnetic configuration of multilayer flakes results in giant negative magnetoresistance. Conversely, magnetoresistance of the ferromagnetic monolayer CrSBr vanishes below the Curie temperature. A second transition ascribed to the ferromagnetic ordering of magnetic defects manifests in a large positive magnetoresistance in the monolayer and a sudden increase of the bulk magnetic susceptibility. We demonstrate this magnetoresistance is tunable with an electrostatic gate, revealing that the ferromagnetic coupling of defects is carrier mediated.

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Cited by in corpus (46)

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• Progress and Prospects in Two-Dimensional Magnetism of van der Waals Materials
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• Designing magnetic properties in CrSBr through hydrostatic pressure and ligand substitution
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• Programmable Magnetic Hysteresis in Orthogonally-Twisted Two-Dimensional CrSBr Magnets via Stacking Engineering
• Microscopic parameters of the van der Waals CrSBr antiferromagnet from microwave absorption experiments
• FePd2Te2: An Anisotropic Two-Dimensional Ferromagnet with One-Dimensional Fe Chains
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• Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
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